Gallium Nitride MBE Lab

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The gallium nitride (GaN) MBE system is a Riber 32.  The machine includes a load lock, a sample outgassing chamber, and a main growth chamber. In the main growth chamber the system is configured with 2 gallium sources, 1 aluminum source, 1 scandium source, a nitrogen plasma source, an indium source as well as a source for silicon. It is equipped with in-situ diagnostics including a reflection high-energy electron diffraction (RHEED) gun for measuring sample surface evolution as well as a residual gas analyzer. Projects include the growth of Lattice-matched ScAlN/GaN heterostructures on polar GaN substrates for intersubband device applications. In addition this system has been used to produce the highest 2DEG mobility ever reported in an AlGaN/GaN heterostructure.